March 2006

Rev 3

1/12

12

STK800

N-channel 30V - 0.006

STripFET™ Power MOSFET

General features

■

Ultra low top and bottom junction to case

thermal resistance

■

Very low capacitances

■

100% Rg tested

■

Fully incapsulated die

■

In compliance with the 2002/95/EC european

directive

Description

This Power MOSFET is the latest development of

STMicroelectronics unique “Single Feature

Size™” strip-based process. The resulting

transistor shows extremely high packing density

for low on-resistance, moreover the double sides

cooling package with ultra low junction to case

thermal resistance allows to handle higher levels

of current.

Applications

■

Switching application

Internal schematic diagram

Type

STK800

30V

<0.0078

Ω

80.4nC*m

Ω

5.2W

Bottom View

Top View

www.st.com

Order codes

Part number

Marking

Package

Packaging

STK800

K800

Tape & reel