OP793 datasheet(1/3 Pages) OPTEK

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OP793 数据表(PDF) 1 Page - OPTEK Technologies

部件名	OP793

功能描述	NPN Pho to tran sis tor with Base- Emitter Resistor

PDF	3 Pages

Scroll/Zoom	100%

制造商	OPTEK [OPTEK Technologies]

网页	http://www.optekinc.com

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OP793 数据表(HTML) 1 Page - OPTEK Technologies

OP793 Datasheet HTML 1Page - OPTEK Technologies

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OP793 Datasheet HTML 3Page - OPTEK Technologies

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Features

• Variety of sensitivity ranges

• TO-18 equivalent package style

• Base-emitter resistor provides ambient

light protection

Description

The OP793/OP798 series consists of

NPN silicon phototransistors molded in

dark blue epoxy packages. These

devices are 100% production tested

using infrared light for close correlation

with Optek’s GaAs and GaAlAs emitters.

The phototransistor has an internal base-

emitter resistor which provides protection

from low level ambient lighting

conditions. This feature is also useful

when the media being detected is semi-

transparent to infrared light in interruptive

applications.

Ab so lute Maxi mum Rat ings (TA = 25

o C un less oth er wise noted)

Collector-EmitterVoltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V

Emit ter Re verse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA

ContinuousCollectorCurrent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40

o C to +100o C

Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing

iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260

o C(1)

PowerDissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW

(2)

Notes:

(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.

Max. 20 grams force may be applied to leads when soldering.

(2) Derate linearly 3.33 mW/

o C above 25o C.

(3) VCE = 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission

wavelength of 890 nm and Ee(APT) of 1.7 mW/cm2 average within a .250" dia. aperture.

(4) The knee point irradiance is defined as the irradiance required to increase IC(ON) to 50

µA.

Typi cal Per form ance Curves

Prod uct Bul le tin OP793, OP798

Sep tem ber 1999

NPN Phototransistor with Base-Emitter Resistor

Types OP793, OP798 Series

Op tek Tech nol ogy, Inc.

1215 W. Crosby Road

Car roll ton, Texas 75006

(972) 323- 2200

Fax (972) 323- 2396

Typi cal Spec tral Re sponse

Wave length - nm

Schematic

OP793

OP798

NOTE: Dimensions not shown on OP798

are common with OP793.

Dimensions are in inches (millimeters).

类似零件编号 - OP793

制造商	部件名	数据表	功能描述
TT Electronics.	OP793	603Kb / 7P	NPN Plastic Silicon Phototransistor
	OP793A	603Kb / 7P	NPN Plastic Silicon Phototransistor
	OP793B	603Kb / 7P	NPN Plastic Silicon Phototransistor
	OP793C	603Kb / 7P	NPN Plastic Silicon Phototransistor
	OP793D	603Kb / 7P	NPN Plastic Silicon Phototransistor

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类似说明 - OP793

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OPTEK Technologies	OP750A	438Kb / 2P	NPN Pho totransistor with Base- Emitter Resistor Jun-1999
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	OP755A	305Kb / 2P	NPN Photo transistor with Base-Emitter Resistor Jun-1999
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TECH PUBLIC Electronics...	MMBT3904M	1Mb / 4P	TRAN (NPN) SISTOR (NPN)

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