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NVMJS2D5N06CL 数据表(PDF) 2 Page - ON Semiconductor

部件名 NVMJS2D5N06CL
功能描述  MOSFET ??Power, Single N-Channel 60 V, 2.4 m, 164 A
PDF  7 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NVMJS2D5N06CL 数据表(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
26
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
10
mA
TJ = 125°C
250
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = 20 V
100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 135 mA
1.2
2.0
V
Threshold Temperature Coefficient
VGS(TH)/TJ
−5.0
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 50 A
2.0
2.4
mW
VGS = 4.5 V
ID = 50 A
2.6
3.3
Forward Transconductance
gFS
VDS =15 V, ID = 50 A
286
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
3600
pF
Output Capacitance
COSS
1700
Reverse Transfer Capacitance
CRSS
28
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 48 V; ID = 50 A
24
nC
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 48 V; ID = 50 A
52
Threshold Gate Charge
QG(TH)
VGS = 10 V, VDS = 48 V; ID = 50 A
6.0
Gate−to−Source Charge
QGS
12
Gate−to−Drain Charge
QGD
4.5
Plateau Voltage
VGP
3.0
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
VGS = 10 V, VDS = 48 V,
ID = 50 A, RG = 2.5 W
10
ns
Rise Time
tr
55
Turn−Off Delay Time
td(OFF)
37
Fall Time
tf
8.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.8
1.2
V
TJ = 125°C
0.75
Reverse Recovery Time
tRR
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 50 A
55
ns
Charge Time
ta
28
Discharge Time
tb
28
Reverse Recovery Charge
QRR
60
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.



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