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ACE14435B 数据表(PDF) 1 Page - ACE Technology Co., LTD.

部件名 ACE14435B
功能描述  P-Channel Enhancement Mode Power MOSFET
PDF  2 Pages
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制造商  ACE [ACE Technology Co., LTD.]
网页  http://www.ace-ele.com
标志 ACE - ACE Technology Co., LTD.

ACE14435B 数据表(HTML) 1 Page - ACE Technology Co., LTD.

  ACE14435B Datasheet HTML 1Page - ACE Technology Co., LTD. ACE14435B Datasheet HTML 2Page - ACE Technology Co., LTD.  
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ACE14435B
P-Channel Enhancement Mode Power MOSFET
VER 1.1
1
Description
⚫
Backlighting
⚫
Power Management Functions
⚫
DC-DC Converters
Features
⚫
VDS =-30V
⚫
ID = -24A
⚫
RDS(ON) @ VGS = -4.5V, TYP 24mΩ
⚫
RDS(ON) @ VGS = -2.5V, TYP 32mΩ
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous) *AC
TA=25℃
ID
-24
A
TA=70℃
-19.4
Drain Current (Pulsed) *B
IDM
-96
A
Power Dissipation
TA=25℃
PD
27.8
W
Operating temperature / storage temperature
TJ/TSTG
-55~150
℃
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still
air environment with TA=25°C. The value in any given application depends on the user's specific board
design.
B: Repetitive rating, pulse width limited by junction temperature.
C:
The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum
Units
Maximum Junction-to-Ambient
t ≤ 10s
R
thJA
29
36
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
3.6
4.5


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