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MB2M 数据表(PDF) 1 Page - Rectron Semiconductor |
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MB2M 数据表(HTML) 1 Page - Rectron Semiconductor |
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1 / 5 page ![]() 1.0 5.0 u u 2018-06/61 MB1M THRU MB10M MB1M MB2M MB4M MB6M MB8M MB10M 100 200 400 600 800 1000 100 200 400 600 800 1000 70 140 280 420 560 700 35 75 REV:O 5.08 35 MB1M MB2M MB4M MB6M MB8M MB10M 100 1000 1.0 1.0 TA =125 oC TA =25 oC MBM Typical Junction Capacitance (Note 3) CJ 15 pF 3. Measured at 1 MHz and applied reverse voltage of 4.0 volts. Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Operating and Storage Temperature Range Maximum Average Reverse Current at Rated DC Blocking Voltage Maximum Forward Voltage Drop per Bridge Element at 1.0A DC Typical Current Square Time 500 Dimensions in inches and (millimeters) |
类似零件编号 - MB2M |
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类似说明 - MB2M |
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