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STS2DPF80 数据表(PDF) 3 Page - STMicroelectronics

部件名 STS2DPF80
功能描述  DUAL P-CHANNEL 80V - 0.21 Ohm - 2.3A SO-8
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS2DPF80 数据表(HTML) 3 Page - STMicroelectronics

  STS2DPF80 Datasheet HTML 1Page - STMicroelectronics STS2DPF80 Datasheet HTML 2Page - STMicroelectronics STS2DPF80 Datasheet HTML 3Page - STMicroelectronics STS2DPF80 Datasheet HTML 4Page - STMicroelectronics STS2DPF80 Datasheet HTML 5Page - STMicroelectronics STS2DPF80 Datasheet HTML 6Page - STMicroelectronics STS2DPF80 Datasheet HTML 7Page - STMicroelectronics STS2DPF80 Datasheet HTML 8Page - STMicroelectronics STS2DPF80 Datasheet HTML 9Page - STMicroelectronics  
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STS2DPF80
TAB.5 SWITCHING ON
TAB.6 SWITCHING OFF
TAB.7 SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 40 V
ID = 1 A
RG =4.7
Ω
VGS = 10 V
(Resistive Load, Figure 1)
13.5
18
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 64V ID= 2A VGS=10V
(See test circuit, Figure 2)
20
2.5
4.9
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 40 V
ID = 1 A
RG =4.7
Ω,
VGS = 10 V
(Resistive Load, Figure 1)
32
13
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current (pulsed)
2.3
9.2
A
A
VSD (*)
Forward On Voltage
ISD = 1 A
VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2 A
di/dt = 100A/µs
VDD = 40 V
Tj = 150°C
(See test circuit, Figure 3)
47
87
3.7
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance



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