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MBR3045CT 数据表(PDF) 1 Page - Vishay Siliconix |
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MBR3045CT 数据表(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() MBR3045CT, MBRB3035CT, MBRB3045CT www.vishay.com Vishay General Semiconductor Revision: 17-Nov-17 1 Document Number: 88677 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Common Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-263AB) package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB package) • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. MECHANICAL DATA Case: TO-220AB, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified (“_X” denotes revision code, e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 35 V, 45 V IFSM 200 A VF 0.60 V TJ max. 150 °C Package TO-220AB, D2PAK (TO-263AB) Diode variations Common cathode CASE PIN 2 PIN 1 PIN 3 TO-220AB MBR3045CT MBRB3045CT MBRB3035CT PIN 1 PIN 2 K HEATSINK 1 2 3 1 2 K D2PAK (TO-263AB) MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBRB3035CT MBRB3045CT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 V Working peak reverse voltage VRWM 35 45 Maximum DC blocking voltage VDC 35 45 Maximum average forward rectified current total device IF(AV) 30 A per diode 15 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 Peak repetitive reverse current per diode at tp = 2.0 μs, 1 kHz IRRM 2.0 Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +175 |
类似零件编号 - MBR3045CT |
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类似说明 - MBR3045CT |
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