MBRF2090CT, MBRF20100CT

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Vishay General Semiconductor

Revision: 16-Mar-18

1

Document Number: 89319

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters or polarity

protection application.

MECHANICAL DATA

Case: ITO-220AB



Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

2 x 10 A

90 V, 100 V

150 A

0.65 V

150 °C

Package

ITO-220AB

Circuit configuration

Common cathode

TMBS

®

ITO-220AB

1

2

3

PIN 1

PIN 2

PIN 3

MBRF2090CT

MBRF20100CT

PARAMETER

SYMBOL

MBRF2090CT

MBRF20100CT

UNIT

Maximum repetitive peak reverse voltage

90

100

V

Working peak reverse voltage

90

100

V

Maximum DC blocking voltage

90

100

V

Maximum average forward rectified current



total device

20

A

per diode

10

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

150

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

-65 to +150

°C

Isolation voltage from terminal to heatsink t = 1 min

1500

V