Bi−Directional Surge Protector

V

I

ESDL2012

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Maximum Reverse Peak Pulse Current

Working Peak Reverse Voltage

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

I/O Pin to GND

1.0

V

Breakdown Voltage

1.4

1.6

2.1

V

Reverse Leakage Current

30

500

nA

Clamping Voltage (Note 2)

IEC61000−4−2, ±8 kV Contact

Figures 1 and 2

V

Clamping Voltage, 200 ns TLP,

IEC61000−4−2 Level 1 Equivalent

(±2 kV Contact, ±4 kV Air)

IEC61000−4−2 Level 2 Equivalent

(±4 kV Contact, ±8 kV Air)

3.5

4.0

5.0

V

4.7

5.2

7.5

Reverse Peak Pulse Current per

Figure 12

3.5

4.7

A

Clamping Voltage,

IEC61000−4−5 (1.2/50 ms)

Waveform per Figure 12

3.1

3.4

4.5

V

Clamping Voltage,

IEC61000−4−5 (1.2/50 ms)

Waveform per Figure 12

3.7

4.1

5.5

V

Dynamic Resistance

(200 ns TLP, 4 A to 8 A)

I/O Pin to GND

I/O Pin to GND (SZESDL2012)

0.30

0.65

W

Junction Capacitance

0.18

0.25

0.23

0.35

pF

Insertion Loss

f = 10 GHz

f = 13 GHz

f = 15 GHz

0.26

0.27

0.28

0.33

0.36

0.37

dB

Return Loss

f = 10 GHz

f = 13 GHz

f = 15 GHz

14

12

11

16

14

13

dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. For test procedure see application note AND8307/D.

3. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.