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KAI-2001 数据表(PDF) 21 Page - ON Semiconductor

部件名 KAI-2001
功能描述  1600 (H) x 1200 (V) Interline CCD Image Sensor
PDF  37 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

KAI-2001 数据表(HTML) 21 Page - ON Semiconductor

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KAI−2001
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20
OPERATION
Absolute Maximum Ratings
Absolute maximum rating is defined as a level or
condition that should not be exceeded at any time per the
description. If the level or the condition is exceeded,
the device will be degraded and may be damaged.
Table 8. ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Minimum
Maximum
Unit
Notes
Operating Temperature
TOP
−50
70
°C
1
Humidity
RH
5
90
%
2
Output Bias Current
IOUT
0.0
10
mA
3
Off-Chip Load
CL
10
pF
4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Noise performance will degrade at higher temperatures.
2. T = 25
°C. Excessive humidity will degrade MTTF.
3. Total for both outputs. Current is 5 mA for each output. Note that the current bias affects the amplifier bandwidth.
4. With total output load capacitance of CL = 10 pF between the outputs and AC ground.
Table 9. MAXIMUM VOLTAGE RATINGS BETWEEN PINS
Description
Minimum
Maximum
Unit
Notes
RL, RR, H1S, H2S, H1BL, H2BL, H1BR, H2BR, H1BR,
OGL, OGR to ESD
0
17
V
Pin to Pin with ESD Protection
−17
17
V
1
VDDL, VDDR to GND
0
25
V
1. Pins with ESD protection are: RL, RR, H1S, H2S, H1BL, H2BL, H1BR, H2BR, OGL, and OGR.
Table 10. DC BIAS OPERATING CONDITIONS
Description
Symbol
Min.
Nom.
Max.
Unit
Maximum
DC Current
Notes
Output Gate
OG
−3.0
−2.5
−2.0
V
1
mA
Reset Drain
RD
11.5
12.0
12.5
V
1
mA
Output Amplifier Supply
VDD
14.5
15.0
15.5
V
1 mA
1
Ground
GND
0.0
0.0
0.0
V
Substrate
SUB
8.0
VAB
17.0
V
2, 4
ESD Protection
ESD
−8.0
−7.0
−6.0
V
3
Output Amplifier Return
VSS
0.0
0.7
1.0
V
1. The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value VAB is set such that
the photodiode charge capacity is 40,000 electrons.
2. VESD must be at least 1 V more negative than H1L, H2L and RL during sensors operation AND during camera power turn on.
3. One output, unloaded.
4. Refer to Application Note Using Interline CCD Image Sensors in High Intensity Visible Lighting Conditions.



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