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LMV321 数据表(PDF) 4 Page - ON Semiconductor |
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LMV321 数据表(HTML) 4 Page - ON Semiconductor |
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4 / 22 page ![]() LMV321, NCV321, LMV358, LMV324 www.onsemi.com 4 2.7 V DC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 2.7 V, RL = 1 MW, V− = 0 V, VO = V+/2) Parameter Symbol Condition Min Typ Max Unit Input Offset Voltage VIO TA = TLow to THigh (Note 4) 1.7 9 mV Input Offset Voltage Average Drift ICVOS TA = TLow to THigh (Note 4) 5 mV/°C Input Bias Current IB TA = TLow to THigh (Note 4) <1 nA Input Offset Current IIO TA = TLow to THigh (Note 4) <1 nA Common Mode Rejection Ratio CMRR 0 V v VCM v 1.7 V 50 63 dB Power Supply Rejection Ratio PSRR 2.7 V v V+ v 5 V, VO = 1 V 50 60 dB Input Common−Mode Voltage Range VCM For CMRR w 50 dB 0 to 1.7 −0.2 to 1.9 V Output Swing VOH RL = 10 kW to 1.35 V VCC − 100 VCC − 10 mV VOL RL = 10 kW to 1.35 V (Note 5) 60 180 mV Supply Current LMV321, NCV321 LMV358/LMV358I (Both Amplifiers) LMV324 (4 Amplifiers) ICC 80 140 260 185 340 680 mA 2.7 V AC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 2.7 V, RL = 1 MW, V− = 0 V, VO = V+/2) Parameter Symbol Condition Min Typ Max Unit Gain Bandwidth Product GBWP CL = 200 pF 1 MHz Phase Margin Qm 60 ° Gain Margin Gm 10 dB Input−Referred Voltage Noise en f = 50 kHz 50 nV/√Hz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. For LMV321, LMV358, LMV324: TA = −40°C to +85°C For LMV321I, LMV358I, NCV321: TA = −40°C to +125°C. 5. Guaranteed by design and/or characterization. |
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