VCUT0505B-HD1 datasheet(2/5 Pages) VISHAY

2 / 5 page

VCUT0505B-HD1

www.vishay.com

Vishay Semiconductors

Rev. 2.3, 03-Jan-2019

Document Number: 81852

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CUT THE SPIKES WITH VCUT0505B-HD1:

The VCUT0505B-HD1 is a bidirectional and symmetrical (BiSy) ESD protection device which clamps positive and negative

overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT0505B-HD1 offers a high

isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small package

size of the tiny LLP1006-2L package the line inductance is very low, so that fast transients like an ESD strike can be clamped

with minimal over- or undershoots.

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330

/150 pF)

Fig. 2 - 8/20 μs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR

Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR

ELECTRICAL CHARACTERISTICS VCUT0505B-HD1



(Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

lines

Reverse stand-off voltage

Max. reverse working voltage

VRWM

Reverse voltage

At IR = 0.1 μA

Reverse current

At VR = 5 V

0.1

μA

Reverse breakdown voltage

At IR = 1 mA

VBR

Reverse clamping voltage

At IPP = 1 A

At IPP = IPPM = 3.5 A

Capacitance

At VR = 0 V; f = 1 MHz

-18

At VR = 2.5 V; f = 1 MHz

-14.5

100

1000

10000

100

120

-10 0

10 20 30 40 50 60 70 80 90 100

Axis Title

t (ns)

2nd line

Rise time = 0.7 ns to 1 ns

20557

100

1000

10000

100

010

Axis Title

t (µs)

2nd line

20 µs to 50 %

8 µs to 100 %

20548

0123456

VR (V)

21122

f = 1 MHz

-10

-8

-6

-4

-2

0.01

0.1

100

1000 10 000

IR (µA)

21123

Pin 1 to 2

VCUT0505B-HD1 数据表(PDF) 2 Page - Vishay Siliconix

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