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DS312W 数据表(PDF) 2 Page - AiT Semiconductor Inc. |
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DS312W 数据表(HTML) 2 Page - AiT Semiconductor Inc. |
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2 / 5 page ![]() AiT Semiconductor Inc. www.ait-ic.com DS32W~DS320W SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3A REV1.0 - MAR 2015 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Parameter Symbol DS32W DS34W DS36W DS38W DS310W DS312W DS315W DS320W Unit Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V Maximum RMS Voltage VRMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage VDC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current IF(AV) 3.0 A Peak Forward Surge Current 8.3ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) IFSM 80 70 A Max Instantaneous Forward Voltage at 3A VF 0.55 0.70 0.85 0.95 V Maximum DC Reverse Current at Rated DC Blocking Voltage TA=25°C TA=100°C IR 0.5 10 0.3 5 mA Typical Junction CapacitanceNOTE1 CJ 250 160 pF Typical Thermal ResistanceNOTE2 RθJA 65 °C/W Operating Junction Temperature Range TJ -55 ~ +125 °C Storage Temperature Range TSTG -55 ~ +150 °C NOTE1: Measured at 1MHz and applied reverse voltage of 4V D.C. NOTE2: P.C.B. mounted with 0.2 x 0.2" (5 x 5 mm) copper pad areas. |
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