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ES2ABF 数据表(PDF) 2 Page - AiT Semiconductor Inc. |
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ES2ABF 数据表(HTML) 2 Page - AiT Semiconductor Inc. |
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2 / 6 page ![]() AiT Semiconductor Inc. www.ait-ic.com ES2ABF~ES2JBF SUPERFAST RECOVERY RECTIFIER REVERSE VOLTAGE 50V TO 600V FORWARD CURRENT 2A REV1.1 - JUN 2017 RELEASED, JUL 2017 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Parameter Symbol ES2ABF ES2BBF ES2CBF ES2DBF ES2EBF ES2GBF ES2JBF Unit Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at TL=100°C IF(AV) 2 A Peak Forward Surge Current 8.3ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) IFSM 30 A Maximum Forward Voltage at 2A VF 1 1.25 1.65 V Maximum DC Reverse Current at Rated DC Blocking Voltage TA=25°C TA=125°C IR 5 100 uA Typical Junction Capacitance at VR=4V, f=1MHz CJ 45 pF Maximum Reverse Recovery Time at IF=0.5A, IR=1A, Irr=0.25A trr 35 ns Typical Thermal ResistanceNOTE1 RθJA 65 °C/W Operating and Storage Temperature Range TJ, TSTG -55 ~+150 °C NOTE1: P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas. |
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