MBT3946D datasheet(3/13 Pages) AITSEMI

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AiT Semiconductor Inc.

www.ait-ic.com

MBT3946D

SWITCHING TRANSISTORS

DUAL GENERAL PURPOSE TRANSISTORS

REV1.0

- MAR 2013 RELEASED -

- 3 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted

Parameter

Symbol

Conditions

Min

Max

Unit

OFFCHARACTERISTICS

Collector–Emitter

Breakdown VoltageNOTE2

V (BR)CEO

IC = 1.0mAdc, IB = 0

NPN

Vdc

IC = -1.0mAdc, IB = 0

PNP

-40

Collector–Base

Breakdown Voltage

V(BR)CBO

IC =10μAdc, IE = 0

NPN

Vdc

IC =-10μAdc, IE = 0

PNP

-40

Emitter-Base

Breakdown Voltage

V(BR)EBO

IE =10μAdc, IC = 0

NPN

6.0

Vdc

IE =-10μAdc, IC = 0

PNP

-5.0

Base Cutoff Current

IBL

VCE = 30Vdc, VEB = 3.0Vdc

NPN

nAdc

VCE = -30Vdc, VEB = -3.0Vdc

PNP

-50

Collector Cutoff Current

ICEX

VCE = 30Vdc, VEB = 3.0Vdc

NPN

nAdc

VCE = -30Vdc, VEB = -3.0Vdc

PNP

-50

ONCHARACTERISTICSNOTE2

DC Current Gain

hFE

IC = 0.1mAdc, VCE = 1. 0Vdc

IC = 1.0mAdc, VCE = 1.0Vdc

IC = 10mAdc,VCE = 1.0Vdc

IC = 50mAdc, VCE = 1.0Vdc

IC = 100mAdc,VCE = 1.0Vdc

NPN

100

300

IC = –0.1mAdc, VCE = –1. 0Vdc

IC = –1.0mAdc, VCE = –1.0Vdc

IC = –10mAdc,VCE = –1.0Vdc

IC = –50mAdc, VCE = –1.0Vdc

IC = –100mAdc,VCE = –1.0Vdc

PNP

100

300

Collector–Emitter

Saturation Voltage

VCE(SAT)

IC = 10mAdc,IB = 1.0mAdc

IC = 50mAdc, IB = 5.0mAdc

NPN

0.2

Vdc

0.3

IC = –10mAdc,IB = –1.0mAdc

IC = –50mAdc, IB = –5.0mAdc

PNP

- 0.25

-0.4

Base–Emitter

Saturation Voltage

VBE(SAT)

IC = 10mAdc, IB = 1.0mAdc

NPN

0.65

0.85

Vdc

IC = 50mAdc, IB = 5.0mAdc

0.95

IC = –10mAdc, IB = –1.0mAdc

PNP

-0.65

-0.85

IC = –50mAdc, IB = –5.0mAdc

-0.95

NOTE2: Pulse Test: Pulse Width

≤300μs; Duty Cycle≤2.0%.

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