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RF3334PCBA 数据表(PDF) 2 Page - RF Micro Devices

部件名 RF3334PCBA
功能描述  IF LOW NOISE AMPLIFIER/MIXER
PDF  14 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

RF3334PCBA 数据表(HTML) 2 Page - RF Micro Devices

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8-458
RF3334
Rev A5 031020
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to 7.0
VDC
IF Input Level
500
mVpp
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
DC Specifications
Supply Voltage
4.75
5
5.25
V
Supply Current
20
24
mA
RFAGC Control Voltage
0.5
4.5
V
0.5V=Minimum Gain
4.5V=Maximum Gain
RFAGC Input Impedance
300
k
AC Specifications
LNA+AGC+Mixer
RF Frequency Range
0 to 700
MHz
On-chip signal path is DC-coupled, minimum
frequency depends on external AC coupling
components.
RF Input 3dB Bandwidth
700
MHz
On-chip signal path is DC-coupled, minimum
frequency depends on external AC coupling
components.
RF Input Impedance
75
RF Input VSWR
1.4
At 100MHz
Mixer Output 3dB Bandwidth
100
MHz
Defined by on-chip first-order low-pass filter
Mixer Output Impedance
300
Differential
Mixer Output VSWR
1.2
At 100MHz
Maximum Gain
27
30
dB
RFAGC=4.5V
Minimum Gain
-2
dB
RFAGC=0.5V
Output 1dB Compression
90
dB
µV(rms)
Maximum Gain
Input IP3, Maximum Gain
78
dB
µV(rms)
LNA Input to Mixer Output
Input IP3, Minimum Gain
79
dB
µV(rms)
LNA Input to Mixer Output
Noise Figure
5
dB
SSB, Cascaded LNA, AGC & Mixer
LO
LO Frequency Range
0 to 800
MHz
LO Input Impedance
75
Differential
LO Input VSWR
1.6:1
LO Input Level
80
dBuV
LO Bandwidth
800
MHz
LO Rejection to RF Input
50
dB
LO Rejection to Input of IF
Amplifier
65
dB
IF Amplifier
IF Frequency Range
0 to 120
MHz
Input Impedance
4000
Differential
Output Impedance
10
Differential
Differential Voltage Gain
Gain Set Resistor=2500
10
dB
R1=1k
Gain Set Resistor=140
31
dB
R1=1k
Gain Set Resistor=5
40
dB
R1=1k
IF 3dB Bandwidth
140
MHz
Gain Set=5
Equivalent Input Noise
1.5
µVrms
Gain Set=140
Output Swing
6
8
VP-P
Into 1k
Ω load, at 50MHz
Output 1dB Compression
127
dB
µV(rms)
Into 1k
Ω load, at 50MHz
Output IP3
137
dB
µV(rms)
Into 1k
Ω load, at 50MHz
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).



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