IRLR014 datasheet(2/13 Pages) VISHAY

2 / 13 page

IRLR014, IRLU014, SiHLR014, SiHLU014

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Vishay Siliconix

S21-0818-Rev. E, 02-Aug-2021

Document Number: 91321

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

110

°C/W

Maximum junction-to-ambient

(PCB mount) a

RthJA

Maximum junction-to-case (drain)

RthJC

5.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

VDS temperature coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

0.073

V/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = - 250 μA

1.0

2.0

Gate-source leakage

IGSS

VGS = ± 10 V

± 100

Zero gate voltage drain current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 48 V, VGS = 0 V, TJ = 125 °C

250

Drain-source on-state resistance

RDS(on)

VGS = 5.0 V

ID = 4.6 Ab

0.20

VGS = 4.0 V

ID = 3.9 Ab

0.28

Forward transconductance

gfs

VDS = 25 V, ID = 4.6 A

3.4

Dynamic

Input capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

400

Output capacitance

Coss

170

Reverse transfer capacitance

Crss

-42

Total gate charge

VGS = 5.0 V

ID = 10 A, VDS = 48 V,

see fig. 6 and 13b

8.4

Gate-source charge

Qgs

3.5

Gate-drain charge

Qgd

6.0

Turn-on delay time

td(on)

VDD = 30 V, ID = 10 A,

Rg = 12

Ω, RD = 2.8 Ω, see fig. 10b

-9.3

Rise time

110

Turn-off delay time

td(off)

-17

Fall time

-26

Internal drain inductance

Between lead,

6 mm (0.25") from

package and center of

die contactc

-4.5

Internal source inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol

showing the

integral reverse

p - n junction diode

7.7

Pulsed diode forward current a

ISM

Body diode voltage

VSD

TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb

1.6

Body diode reverse recovery time

trr

TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb

130

Body diode reverse recovery charge

Qrr

-0.33

0.65

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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