IRFR310 datasheet(2/13 Pages) VISHAY

2 / 13 page

IRFR310, IRFU310, SiHFR310, SiHFU310

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Vishay Siliconix

S21-0771-Rev. E, 19-Jul-2021

Document Number: 91272

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

(PCB mounted, steady-state) a

RthJA

-50

°C/W

Maximum junction-to-ambient

RthJA

110

Maximum junction-to-case

RthJC

-5.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

400

VDS temperature coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

0.47

V/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-source leakage

IGSS

VGS = ± 20 V

± 100

Zero gate voltage drain current

IDSS

VDS = 400 V, VGS = 0 V

μA

VDS = 320 V, VGS = 0 V, TJ = 125 °C

250

Drain-source on-state resistance

RDS(on)

VGS = 10 V

ID = 1.0 A b

3.6

Forward transconductance

gfs

VDS = 50 V, ID = 1.0 A b

0.97

Dynamic

Input capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5 c

170

Output capacitance

Coss

-34

Reverse transfer capacitance

Crss

-6.3

Total gate charge

VGS = 10 V

ID = 2.0 A, VDS = 320 V,

see fig. 6 and 13 b, c

Gate-source charge

Qgs

1.9

Gate-drain charge

Qgd

6.5

Turn-on delay time

td(on)

VDD = 200 V, ID = 2.0 A,

Rg = 24

Ω, RD = 95 Ω,

see fig. 10 b, c

-7.9

Rise time

-9.9

Turn-off delay time

td(off)

-21

Fall time

-11

Gate input resistance

f = 1 MHz, open drain

1.7

11.2

Internal drain inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

Internal source inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol

showing the

integral reverse

p - n junction diode

1.7

Pulsed diode forward current a

ISM

6.0

Body diode voltage

VSD

TJ = 25 °C, IS = 1.7 A, VGS = 0 V b

1.6

Body diode reverse recovery time

trr

TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μs b

240

540

Body diode reverse recovery charge

Qrr

-0.85

1.6

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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