IRF820AS datasheet(2/11 Pages) VISHAY

2 / 11 page

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

www.vishay.com

Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021

Document Number: 91058

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %.

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

d. Uses IRF820A/SiHF820A data and test conditions.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient (PCB

Mounted, steady-state)a

RthJA

-62

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-2.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

500

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mAd

-0.60

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.5

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 1.5 Ab

3.0

Forward Transconductance

gfs

VDS = 50 V, ID = 1.5 Ad

1.4

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5d

340

Output Capacitance

Coss

-53

Reverse Transfer Capacitance

Crss

-2.7

Output Capacitance

Coss

VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz

490

VDS = 400 V, f = 1.0 MHz

Effective Output Capacitance

Coss eff.

VDS = 0 V to 400 Vc, d

-28

Total Gate Charge

VGS = 10 V

ID = 2.5 A, VDS = 400 V,

see fig. 6 and 13b, d

Gate-Source Charge

Qgs

4.3

Gate-Drain Charge

Qgd

8.5

Turn-On Delay Time

td(on)

VDD = 250 V, ID = 2.5 A,

Rg = 21

Ω, RD = 97 Ω, see fig. 10b, d

-8.1

Rise Time

-12

Turn-Off Delay Time

td(off)

-16

Fall Time

-13

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

2.5

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb

1.6

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μsb, d

330

500

Body Diode Reverse Recovery Charge

Qrr

760

1140

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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