IRF830AS datasheet(2/10 Pages) VISHAY

2 / 10 page

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

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Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021

Document Number: 91062

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS

d. Uses SiHF830A data and test conditions

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

(PCB mounted, steady-state) a

RthJA

-40

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

500

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA d

-0.60

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.5

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 3.0 A b

1.4

Forward Transconductance

gfs

VDS = 50 V, ID = 3.0 A d

2.8

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5 d

620

Output Capacitance

Coss

-93

Reverse Transfer Capacitance

Crss

-4.3

Output Capacitance

Coss

VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz

886

VDS = 400 V, f = 1.0 MHz

Effective Output Capacitance

Coss eff.

VDS = 0 V to 400 V c, d

-39

Total Gate Charge

VGS = 10 V

ID = 5.0 A, VDS = 400 V,

see fig. 6 and 13 b, d

Gate-Source Charge

Qgs

6.3

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 250 V, ID = 5.0 A,

Rg = 14

Ω, RD = 49 Ω, see fig. 10 b, d

-10

Rise Time

-21

Turn-Off Delay Time

td(off)

-21

Fall Time

-15

Gate Input Resistance

f = 1 MHz, open drain

1.7

10.7

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

5.0

Pulsed Diode Forward Current a

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 5.0 A, VGS = 0 V b

1.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μs b, d

430

650

Body Diode Reverse Recovery Charge

Qrr

-2.0

3.0

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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