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STLJS050N12MCLLTAG 数据表(PDF) 4 Page - ON Semiconductor

部件名 STLJS050N12MCLLTAG
功能描述  MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench 120 V, 50.6 m, 4.5 A
PDF  7 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

STLJS050N12MCLLTAG 数据表(HTML) 4 Page - ON Semiconductor

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STLJS050N12MCLL
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4
TYPICAL CHARACTERISTICS
Figure 7. Gate−to−Source Voltage vs. Total
Charge
Figure 8. Capacitance vs. Drain−to−Source
Voltage
Qg, GATE CHARGE (nC)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Ambient Temperature
tAV, TIME IN AVALANCHE (ms)
TA, AMBIENT TEMPERATURE (°C)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
RqJA = 60°C/W
RDS(on) Limit
Thermal Limit
Package Limit
1 ms
10 ms
0
2
4
10
02
4
0.1
10
100
1000
040
1
5
0.001
1
0
3
25
50
75
150
100
1
10
100
0.01
10
0.1
1
0.001
0.1
1
10K
0.00001
10
1000
0.001
6
10
80
120
100
125
1000
10 ms
DC
VGS = 10 V
0.01
10
8
8
6
VDD = 30 V
VDD = 90 V
VDD = 60 V
0.1
TJ = 150°C
TJ = 25°C
TJ = 125°C
1
2
VGS = 4.5 V
0.1
Single Pulse
RqJA = 200°C/W
TA = 25°C
0.01
100
1
100
1K
0.1
0.01
100 ms
100 ms
1 s
10 s
This area is
limited by
RDS(on)
Single Pulse
TJ = Max Rated
RqJA = 200°C/W
TA = 25°C
ID = 5 A
20
60
100
1
5
4
VGS = 2.5 V



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