QPD1016L

DC

– 1.7 GHz, 50 V, 500 W GaN RF Transistor

Datasheet Rev. A, September 2020 | Subject to change without notice

- 2 of 23 -

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Parameter

Rating

Units

+145

V

-7 to +2

V

70

A

See page 17

mA

W

RF Input Power, Pulse, 1.3

GHz, T = 25

+45.5

dBm

Mounting Temperature

(30 Seconds)

°C

Storage Temperature

−65 to +150

°C

Notes:

1.

Operation of this device outside the parameter ranges

given above may cause permanent damage.

2.

Pulsed 300 uS PW, 10% DC

Parameter

Min

Typ

Max Units

50

V

1000

mA

–

−2.8

–

V

Notes:

1. Electrical performance is measured under conditions noted

in the electrical specifications table. Specifications are not

guaranteed over all recommended operating conditions.

Measured Load Pull Performance

Parameter

Typical Values

Units

Frequency, F

1.1

1.2

1.3

1.4

1.5

1.7

GHz

50

50

50

50

50

50

V

1000

1000

1000

1000

1000

1000

mA

Output Power at 3dB

58.8

58.6

58.3

58

57.6

58

dBm

Power Added Efficiency at 3dB

71.7

69.2

72.2

76.1

69.9

71.2

%

21.0

20.6

20.9

21.7

21.0

20.6

dB

Notes:

1.

Pulsed, 300 uS Pulse Width, 10% Duty Cycle

2.

Characteristic Impedance, Zo = 3

Ω.

Measured Load Pull Performance

Parameter

Typical Values

Units

Frequency, F

1.1

1.2

1.3

1.4

1.5

1.7

GHz

50

50

50

50

50

50

V

1000

1000

1000

1000

1000

1000

mA

Output Power at 3dB

57.6

57.1

56.4

57.3

56.1

56.7

dBm

Power Added Efficiency at 3dB

79.2

78.3

77.4

77.8

71.2

73.5

%

22.2

22.1

22.2

22.3

21.7

21.7

dB

Notes:

1.

Pulsed, 300 uS Pulse Width, 10% Duty Cycle

2.

Characteristic Impedance, Zo = 3

Ω.