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REF35 数据表(PDF) 19 Page - Texas Instruments |
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REF35 数据表(HTML) 19 Page - Texas Instruments |
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19 / 35 page ![]() 9 Detailed Description 9.1 Overview The REF35 is family of ultra-low current, low-noise, precision band-gap voltage references that are specifically designed for excellent initial voltage accuracy and drift. The Functional Block Diagram is a simplified block diagram of the REF35 showing basic band-gap topology. 9.2 Functional Block Diagram VIN Digital Core Band-Gap Core R Buffer EN Control EN GND NR VREF Rp VIN Rp for Open Drain EN control 9.3 Feature Description 9.3.1 Supply Voltage The REF35 family of references features an extremely low dropout voltage. For 10 mA loaded conditions, a maximum dropout voltage is 250 mV. Figure 7-28 shows a typical dropout voltage (VDO) versus load current. The device supports operation with input voltage range from VREF + VDO to 6 V. The typical quiescent current is 650 nA and maximum quiescent current over temperature is only 2.6 μA. The low dropout voltage coupled with ultra-low current enable the operation across multiple battery powered applications. 9.3.2 EN Pin The REF35 family supports device enable and disable functionality through logic level control on EN pin. The EN pin of REF35 does not use an internal pull-up resistor. Instead, the pin uses new 'clean EN' technology. This allows the EN pin to be in a no connect condition at start-up, and no extra current is drawn from the supply when the EN pin is pulled low in shutdown mode. When EN pin is pulled high or left unconnected at start-up, the device is in active mode. When EN pin is driven by an open-drain output, a pull-up resistor to VIN is required. The device must be in active mode for normal operation. The EN pin must not be pulled higher than VIN supply voltage. The device can be placed in shutdown mode by pulling the EN pin low. When in shutdown mode, the output of the device becomes high impedance and the quiescent current of the device drops to 100 nA at room temperature. When changing the device state from shutdown to active state, ensure the EN pin is not left floating. Also note that for applications where EN pin is no-connect, total parasitic capacitance on EN pin should be restricted within 30 pF. See the Electrical Characteristics table for logic high and logic low voltage levels. 9.3.3 NR Pin The REF35 pin allows access to the band-gap through the NR pin. Placing a capacitor from the NR pin to GND creates a low-pass filter in combination with the internal resistance of 60 kΩ. Leakage of the capacitance directly impacts the accuracy and temperature drift. If NR functionality is used, choose a low leakage capacitor. A capacitance of 1 μF creates a low-pass filter with corner frequency around 2.7 Hz. Such a filter decreases the overall noise on the VREF pin. Higher capacitance results in a lower filter cut off frequency, further reducing output noise. Please note, using the capacitor on NR pin also increases start-up time. www.ti.com REF35 SNAS809A – DECEMBER 2021 – REVISED AUGUST 2022 Copyright © 2022 Texas Instruments Incorporated Submit Document Feedback 19 Product Folder Links: REF35 |
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