YFW60N03AT/AF/AS

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www.yfwdiode.com

GuangDong YFW Electronics Co, Ltd.

Maximum Ratings at Tc=25°C unless otherwise specified

Characteristics

Test Condition

Symbols

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

30

33

-

V

Static Drain-Source On-Resistance

2

-

6.0

8.5

mΩ

-

8.0

13

Gate -Threshold Voltage

1.0

1.6

2.5

V

-

-5.8

-

mV/°C

Drain -Source Leakage Current

-

-

1

μA

-

-

5

Gate-Source Leakage Current

-

-

±100

nA

Forward Transconductance

-

9.8

-

S

Gate Resistance

-

1.7

-

Ω

Total Gate Charge(4.5V)

-

12.8

-

nC

Gate-Source Charge

-

3.3

-

Gate-Drain Charge

-

6.5

-

Turn-on delay time

-

4.5

-

ns

Rise Time

-

10.8

-

Turn-Off Delay Time

-

25.5

-

Fall Time

-

9.6

-

Input Capacitance

f=1.0MHz

-

1317

-

Output Capacitance

-

163

-

Reverse Transfer Capacitance

-

131

-

Continuous Source Current

1,5

-

-

46

A

Pulsed Source Current

2,5

-

-

92

A

Diode Forward Voltage

2

-

-

1

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=34A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.