YFW100N03AT/AF/AS

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www.yfwdiode.com

GuangDong YFW Electronics Co, Ltd.

Maximum Ratings at Tc=25°C unless otherwise specified

Characteristics

Test Condition

Symbols

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

V(BR)DSS

30

32

-

V

BVDSS Temperature Coefficient

Reference to 25℃, ID=1mA

-

0.028

-

V/°C

Gate -Threshold Voltage

1.2

1.6

2.5

V

Static Drain-Source on-Resistance

note3

-

4.5

5.5

mΩ

-

8.0

9.5

Zero Gate Voltage Drain Current

-

-

1.0

μA

Gate to Body Leakage Current

-

-

±100

nA

Input Capacitance

f=1.0MHz

-

1614

-

Output Capacitance

-

245

-

Reverse Transfer Capacitance

-

215

-

Total Gate Charge

-

33.7

-

nC

Gate-Source Charge

-

8.5

-

Gate-Drain(“Miller”) Charge

-

7.5

-

Turn-on delay time

-

7.5

-

ns

Turn-on Rise Time

-

14.5

-

Turn-Off Delay Time

-

35.2

-

Turn-Off Fall Time

-

9.6

-

Maximum Continuous Drain to Source Diode Forward Current

-

-

70

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

280

A

Drain to Source Diode Forward Voltage

-

-

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us duty cycle ≦ 2%, duty cycle ition is VDD=24VGS=10V,L=0.1mH,IAS=15A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Rev:2021Y1