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STM32F103ZCT7XXX 数据表(PDF) 62 Page - STMicroelectronics |
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STM32F103ZCT7XXX 数据表(HTML) 62 Page - STMicroelectronics |
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62 / 143 page ![]() Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE 62/143 DS5792 Rev 13 Figure 23. Typical application with a 32.768 kHz crystal 5.3.7 Internal clock source characteristics The parameters given in Table 25 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. High-speed internal (HSI) RC oscillator Table 25. HSI oscillator characteristics(1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 8 - MHz DuCy(HSI) Duty cycle - 45 - 55 % ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. -- 1(3) 3. Guaranteed by design. % Factory- calibrated(4) 4. Guaranteed by characterization results. TA = –40 to 105 °C –2 - 2.5 % TA = –10 to 85 °C –1.5 - 2.2 % TA = 0 to 70 °C –1.3 - 2 % TA = 25 °C –1.1 - 1.8 % tsu(HSI)(4) HSI oscillator startup time -1 - 2 µs IDD(HSI)(4) HSI oscillator power consumption - - 80 100 µA |
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