AP9221

Document number: DS42177 Rev. 3 - 2

4 of 16

www.diodes.com

May 2021

© Diodes Incorporated

AP9221

Absolute Maximum Ratings (Notes 5 & 6)

Symbol

Parameter

Rating

Unit

VDD

Supply Voltage (Between VDD and VSS)

-0.3 to 12

V

VDM

Charge Input Voltage

(Between VDD and VM for Protection Chip)

-0.3 to 24

V

VDSS

MOSFET Drain-to-Source Voltage

20

V

VGSS

MOSFET Gate-to-Source Voltage

±12

V

ID

Continuous Drain Current, VGS = 4.5V, TA = +25°C

2.8

A

Continuous Drain Current, VGS = 4.5V, TA = +70°C

2.2

A

PD

Power Dissipation

1,000

mW

TJ

Maximum Junction Temperature

+150

°C

TSTG

Storage Temperature Range

-65 to +150

°C

—

ESD (Charged-Device Model)

1,000

V

—

ESD (Human Body Model)

2,000

V

Notes:

5. Stresses beyond those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings only and

functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods can affect

device reliability.

6. Ratings apply to ambient temperature at +25°C. The JEDEC High-K board design used to derive this data was a 2 inch × 2 inch multilayer board with

2 ounce internal power and ground planes and 2-ounce copper traces on the top and bottom of the board.

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

VDD

Supply Voltage (Between VDD and VSS)

1.5

5.5

V

VDM

Charge Input Voltage (Between VDD and VM)

-0.3

5.5

V

TA

Operating Ambient Temperature

-40

+85

°C