USB2513 datasheet(40/57 Pages) MICROCHIP

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USB251xB/xBi

DS00001692C-page 40

 2010 - 2015 Microchip Technology Inc.

Note 6-2

The rise time for the 3.3 V supply can be extended to 100 ms max if RESET_N is actively driven

low, typically by another IC, until 1

s after all supplies are within operating range.

FIGURE 6-1:

SUPPLY RISE TIME MODEL

TABLE 6-1:

DC ELECTRICAL CHARACTERISTICS

Parameter

Symbol

MIN

TYP

MAX

Units

Comments

I, IS Type Input Buffer

Low Input Level

VILI

0.8

TTL Levels

High Input Level

VIHI

2.0

Input Leakage

IIL

-10

+10

AV

IN = 0 to VDD33

Hysteresis (IS only)

VHYSI

250

350

Input Buffer with Pull-Up (IPU)

Low Input Level

VILI

0.8

TTL Levels

High Input Level

VIHI

2.0

Low Input Leakage

IILL

+35

+90

AV

IN = 0

High Input Leakage

IIHL

-10

+10

AV

IN = VDD33

Input Buffer with Pull-Down (IPD)

Low Input Level

VILI

0.8

TTL Levels

High Input Level

VIHI

2.0

Low Input Leakage

IILL

+10

-10

AV

IN = 0

High Input Leakage

IIHL

-35

-90

AV

IN = VDD33

USB251xB/xBi

ICLK Input Buffer

Low Input Level

VILCK

0.3

High Input Level

VIHCK

0.9

Input Leakage

IIL

-10

+10

AV

IN = 0 to VDD33

t10%

10%

90%

Voltage

tRT33

t90%

Time

100%

3.3 V

VSS

VDD33

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