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STGAP2SM 数据表(PDF) 5 Page - STMicroelectronics |
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STGAP2SM 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 23 page ![]() 4 Electrical characteristics Table 5. Electrical characteristics (TJ = 25 °C, VH = 15 V, VDD = 5 V, unless otherwise specified) Symbol Pin Parameter Test conditions Min. Typ. Max. Unit Dynamic characteristics tDon IN+, IN- Input to output propagation delay ON - 50 75 90 ns tDoff IN+, IN- Input to output propagation delay OFF - 50 75 90 ns tr - Rise time CL =4.7 nF, 10% ÷ 90% - 30 - ns tf - Fall time CL =4.7 nF, 90% ÷ 10% - 30 - ns PWD - Pulse width distortion |tDon -tDoff| - - - 20 ns tdeglitch IN+, IN- Inputs deglitch filter - - 20 40 ns CMTI(1) - Common-mode transient immunity, |dVISO/dt| VCM = 1500 V, see Figure 13 100 - - V/ns Supply voltage VHon - VH UVLO turn-on threshold - 8.6 9.1 9.6 V VHoff - VH UVLO turn-off threshold - 7.9 8.4 8.9 V VHhyst - VH UVLO hysteresis - 0.60 0.75 0.95 V IQHU - VH undervoltage quiescent supply current VH =7 V - 1.3 1.8 mA IQH - VH quiescent supply current - - 1.3 1.8 mA IQHSBY - Standby VH quiescent supply current Standby mode - 400 550 µA SafeClp - GOFF active clamp IGOFF =0.2 A; VH floating - 2 2.3 V IQDD - VDD quiescent supply current - - 1 1.3 mA IQDDSBY - Standby VDD quiescent supply current Standby mode - 40 65 µA Logic inputs Vil IN+, IN- Low level logic threshold voltage - 0.29 ·VDD 1/3 · VDD 0.37 · VDD V Vih IN+, IN- High level logic threshold voltage - 0.62 ·VDD 2/3 · VDD 0.70 · VDD V IINh IN+, IN- INx logic “1” input bias current INx = 5 V 33 50 77 µA IINl IN+, IN- INx logic “0” input bias current INx = GND - - 1 µA Rpd IN+, IN- Inputs pull-down resistors INx = 5 V 65 100 150 kΩ Driver buffer section IGON - Source short-circuit current TJ =25 °C - 4 - A TJ =-40 ÷ +125 °C(1) 3 - 5 VGONH - Source output high level voltage IGON =100 mA VH -0.15 VH -0.125 - V STGAP2S Electrical characteristics DS12541 - Rev 3 page 5/23 |
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