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STPS40A150CHR 数据表(PDF) 4 Page - STMicroelectronics |
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STPS40A150CHR 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 11 page ![]() 1.4 Characteristics (curves) Figure 1. Average forward current versus case temperature (DC, per diode) 0 10 20 30 40 50 0 25 50 75 100 125 150 175 IF(AV)(A) Tc (°C) Figure 2. Forward voltage drop versus forward current (typical values, per diode) 0.1 1.0 10.0 100.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 I (A) F V (V) F Tj = 25 °C Tj = 150 °C Tj = 125 °C Tj = 75 °C Figure 3. Reverse leakage current versus reverse voltage (typical values, per diode) 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IR(µA) V (V) R Tj = 125 °C Tj = 150 °C Tj = 100 °C Tj = 50 °C Tj = 25 °C Tj = 75 °C Figure 4. Relative variation of Zth(j-c) versus pulse duration 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Zth(j-c)/Rth(j-c) tp(s) Single pulse Figure 5. Junction capacitance versus reverse voltage (typical values, per diode) 10 100 1000 1 10 100 1000 C(pF) F = 1 MHz V = 30 mV OSC RMS Tj = 25 °C V (V) R STPS40A150CHR Characteristics (curves) DS13328 - Rev 1 page 4/11 |
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