STPS60A150CHR datasheet(4/11 Pages) STMICROELECTRONICS

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1.3

Electrical characteristics

Limiting value per diodes, unless otherwise specified.

Table 3. Static electrical characteristics

Symbol

Parameter

MIL-STD-750 test

method

Test conditions

Min. Typ. Max. Unit

IR(1)

Reverse leakage current

4016

DC method, VR = 150 V

Tj = 25 °C

µA

Tj = 125 °C

2.0

VF1 (2)(3) Forward voltage drop

4011

IF = 5 A

Tj = -55 °C

0.77 0.84

Tj = 25 °C

0.70 0.78

Tj = 125 °C

0.56 0.62

IF = 10 A

Tj = -55 °C

0.92 1.03

Tj = 25 °C

0.77 0.85

Tj = 125 °C

0.62 0.69

IF = 20 A

Tj = -55 °C

1.27 1.435

Tj = 25 °C

0.85 0.93

Tj = 125 °C

0.70 0.78

IF = 30 A

Tj = -55 °C

1.65 1.87

Tj = 25 °C

0.90 0.99

Tj = 125 °C

0.76 0.83

C(3)

Junction capacitance

4001

VR = 10 V, F = 1 MHz

Tj = 25 °C

237

310

1. 100% tested at 25 °C. Compliance with the 125 °C specification is supported by simulation, characterization and, as per

STMicroelectronics wafer lot acceptance procedure, by sampling on 5 parts per wafer lot, with an acceptance criteria of 0. In

case of fail, a 100% test is performed.

2. Pulse width 680 µs, duty cycle ≤ 2%

3. Compliance with the specification is supported by simulation, characterization and, as per STMicroelectronics wafer lot

acceptance procedure, by sampling on 5 parts per wafer lot, with an acceptance criteria of 0. In case of fail, a 100% test is

performed.

STPS60A150CHR

Electrical characteristics

DS12256 - Rev 6

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