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STGAP2SCMTR 数据表(PDF) 13 Page - STMicroelectronics

部件名 STGAP2SCMTR
功能描述  STGAP2S
PDF  23 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP2SCMTR 数据表(HTML) 13 Page - STMicroelectronics

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7
Layout
7.1
Layout guidelines and considerations
Inorder to optimize the PCB layout, following considerations should be taken into account:
SMT ceramic capacitors (or different types of low-ESR and low-ESL capacitors) must be placed close to
each supply rail pins. A 100 nF capacitor must be placed between VDD and GND and between VH and
GNDISO, as close as possible to device pins, in order to filter high-frequency noise and spikes. In order to
provide local storage for pulsed current a second capacitor with value in the range between 1 µF and 10 µF
should also be placed close to the supply pins.
As a good practice it is suggested to add filtering capacitors close to logic inputs of the device (IN+, IN-), in
particular for fast switching or noisy applications.
The power transistors must be placed as close as possible to the gate driver, so to minimize the gate loop
area and inductance that might bring to noise or ringing.
To avoid degradation of the isolation between the primary and secondary side of the driver, there should not
be any trace or conductive area below the driver.
If the system has multiple layers, it is recommended to connect the VH and GNDISO pins to internal ground
or power planes through multiple vias of adequate size. These vias should be located close to the IC pins to
maximize thermal conductivity.
7.2
Layout example
Anexample of STGAP2SC Half-Bridge PCB layout with main signals highlighted by different colors is shown in
Figure 11 . It is recommended to follow this example for proper positioning and connection of filtering capacitors.
Figure 11. Layer traces and copper
Q1
Q2
U1
U2
CVH1
CVH2
CVDD1
ROFF
RON
G1
D1
S1
CIN
RIN
CVH1
CVH2
CVDD1
ROFF
RON
G2
D2
S2
CIN
RIN
TOP
BOTTOM
STGAP2S
Layout
DS12541 - Rev 3
page 13/23



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