5

Radiations

Total ionizing dose (TID):

For the qualification, the product is characterized in TID as per MIL-STD-883 TM 1019 up to 50 krad (Si) on 5

biased parts at high dose rate, such a rate being the worst condition for a pure CMOS technology.

All parameters provided in Table 1 apply to both pre- and post-irradiation.

Each new production lot is tested at high dose rate as per MIL-STD-883 TM 1019 on 5 parts.

Heavy-ions:

Single Event Latchup (SEL) is characterized at 125 °C at a LET of 62.5 MeV.cm2/mg. The test shows the product

is immune to heavy ions at this LET. Heavy-ion trials are performed on qualification lots only.

The results in radiation are summarized in Table 5 as follows.

Type

Conditions

Results

TID (1)

•

High-dose rate (40 krad (Si) / h)

•

Temperature: 25 °C

•

Performed on 5 biased parts

WithinTable 1 up to 50 krad(Si)

SEL (2)

•

LET: 62.5 MeV.cm2/mg (Xenon ions)

•

Temperature: 125 °C

•

•

Normal incidence

Immune to SEL up to

(extracted from the LEOAC00, by similarity of

architecture)

1. A total ionizing dose (TID) of 50 krad(Si) is equivalent to 500 Gy(Si), (1 gray = 100 rad).

2. SEL: single event latch-up

LEOAC08

Radiations

DS13855 - Rev 2

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