RHFOSC04 datasheet(5/16 Pages) STMICROELECTRONICS

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Electrical characteristics

VDD = +2.3 V to 3.6 V, VSS = GND, enabled (EN=VDD), Tamb = -55°C to +125°C, unless otherwise specified.

Table 5. DC electrical characteristics

Symbol

Parameters

Test conditions

Min.

Typ.

Max.

Unit

IDD

Quiescent current

IN1 and IN2 floating

Iout = 0 (no load)

3.4

3.8

Quiescent current in disable

EN = 0 V

µA

IoutZ

Output current in disable on Q0

EN = 0 V

VOL

Low level output voltage on Q0

IOL = +100 µA,

VDD = 2.3 V

200

IOL = +100 µA,

VDD = 3.6 V

200

VOH

High level output voltage on Q0

IO L= +100 µA,

VDD = 2.3 V

2.1

IOL = +100 µA,

VDD = 3.6 V

2.8

VIL

Low level input voltage on A, B, EN inputs

VDD = 2.3 V

0.8

VDD = 3.6 V

0.8

VIH

High level input voltage on A, B, EN inputs

VDD = 2.3 V

VDD = 3.6 V

IIL

Input leakage current low on A, B, EN inputs

Vin = 0 V

VDD= 2.3 V to 3.6 V

-0.1

µA

IIH

Input leakage current high on A, B, EN inputs

Vin = VDD

VDD = 2.3 V to 3.6 V

0.1

µA

Isink

Short-circuit output current

Vout = VDD

VDD = 2.3 V to 3.6 V

Isource

Short-circuit output current

Vout = 0 V

VDD = 2.3 V to 3.6 V

-80

-50

RHFOSC04

Electrical characteristics

DS13330 - Rev 1

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