STPSC10065 datasheet(2/13 Pages) STMICROELECTRONICS

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Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

IF(RMS)

Forward rms current

IF(AV)

Average forward current

TC = 150 °C, DC current(1)

IFRM

Repetitive peak forward current

Tc = 150 °C, Tj = 175 °C, δ = 0.1

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

210

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature

-40 to +175

°C

1. Value based on Rth(j-c) max.

Table 2. Thermal parameters

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

1.0

1.5

°C/W

For more information, please refer to the following application note:

•

AN5088: Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

130

µA

Tj = 150 °C

900

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

1.30

1.45

Tj = 150 °C

1.45

1.65

Tj = 175 °C

1.50

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.97 x IF(AV) + 0.068 x IF 2 (RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPSC10065

Characteristics

DS12185 - Rev 3

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