STPSC12065 datasheet(4/14 Pages) STMICROELECTRONICS

部件名	STPSC12065

功能描述	650 V, 12 A power Schottky silicon carbide diode

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 14 page

Figure 5. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

Zth(j-c) /Rth(j-c)

Single pulse

Figure 6. Non-repetitive peak surge forward current

versus pulse duration (sinusoidal waveform)

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

tp(s)

IFSM(A)

Ta=25 °C

Ta=125 °C

Figure 7. Total capacitive charges versus reverse voltage

applied (typical values)

100

150

200

250

300

350

400

VR(V)

QCj(nC)

Figure 8. Thermal resistance junction to ambient versus

copper surface under tab (typical values)

Rth(j-a) (°C/W)

D²PAK / D²PAK HV

Epoxy printed board FR4, copper thickness = 70 µm

SCu(cm²)

STPSC12065

Characteristics (curves)

DS11623 - Rev 3

page 4/14

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