2

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, IDS = 100 µA

65

-

V

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 28 V

-

1

μA

VGS = 0 V, VDS = 50 V

-

IGSS

Gate-body leakage current

VGS = -6/10 V, VDS = 0 V

-

±100

nA

VGS(th)

Gate threshold voltage

VDS = 28 V, IDS = 600 μA

1.75

-

2.5

V

VGS(Q)

Gate quiescent voltage

VDS= 1 V, IDS= 700 mA

2

-

5

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, IDS = 5 A

-

0.9

V

IDS(on)

Static drain-source on-current

VGS= 10 V, VDS= 100 mV

-

2.5

A

RDS(on)

Static drain-source on-resistance

VGS= 10 V, VDS= 100 mV

-

1

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

f

Frequency

1300

1700

MHz

POUT

Output power

f= 1625 MHz, 1dB compression

point

80

W

GPS

Power gain

18

dB

ƞD

Drain efficiency

57

%

VSWR

Load mismatch

POUT = 80 W, all phases

10:1

Note:

VDD = 28 V, IDQ = 400 mA, pulsed CW, pulse width=20 μs, duty cycle=10%.

RF2L16080CF2

Electrical characteristics

DS13222 - Rev 2

page 3/12