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RF2L36040CF2 数据表(PDF) 3 Page - STMicroelectronics |
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RF2L36040CF2 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 100 µA 60 V IDSS Zero-gate voltage drain current VGS = 0 V, VDS = 28 V 1 μA VGS = 0 V, VDS = 50 V IGSS Gate-body leakage current VGS = -6/10 V, VDS = 0 V ±100 nA VGS(th) Gate threshold voltage VDS = 1 V, ID = 600 μA 1.75 2.5 V VDS = 28 V, ID = 600 μA VGS(Q) Gate quiescent voltage VDS= 28 V, ID= 380 mA 2.8 V VDS(on) Static drain-source on-voltage VGS = 10 V, ID = 800 mA 100 300 mV VGS = 10 V, ID = 2 A 300 700 RDS(on) Drain-source on-state resistance VGS = 10 V, VDS = 100 mV 1 Ω IDS(on) Static drain-source on-current VGS = 10 V, VDS = 100 mV 2.5 A Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit f Frequency 2700 3600 MHz POUT Output power f = 3600 MHz, @ 1 dB compression point 40 W GPS Power gain 14 dB ƞD Drain efficiency 48 % VSWR Load mismatch POUT = 40 W, all phases 10:1 Note: VDD = 28 V, IDQ= 380 mA, pulsed CW test signal, pulse width=100 μs, duty cycle=10%. RF2L36040CF2 Electrical characteristics DS13235 - Rev 2 page 3/13 |
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