2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, IDS = 100 µA

60

V

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 28 V

1

μA

VGS = 0 V, VDS = 50 V

IGSS

Gate-body leakage current

VGS = -6/10 V, VDS = 0 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = 1 V, IDS = 600 μA

1.75

2.50

V

VDS = 28 V, IDS = 600 μA

VGS(Q)

Gata quiescent voltage

VDS = 1 V, IDS = 600 mA

3

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, IDS = 800 mA

30

170

mV

VGS = 10 V, IDS = 3.5 A

150

750

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

2.5

A

RDS(on)

Static drain-source on-resistance

VGS = 10 V, IDS = 800 mA

1

Ω

VGS = 10 V, IDS = 3.5 A

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

f

Frequency

3100

3500

MHz

POUT

Output power

f = 3500 MHz, 1 dB compression point

75

W

GPS

Power gain

12.5

dB

ηD

Drain efficiency

45

%

VSWR

Load mismatch

at 10 W WCDMA Output Power

10:1

Note:

VDD = 28 V, IDQ = 600 mA, pulsed CW, PW = 10 μs, duty cycle = 10%.

RF2L36075CF2

Electrical characteristics

DS13249 - Rev 2

page 3/13