2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, IDS = 100 µA

65

V

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 28 V

1

μA

VGS = 0 V, VDS = 50 V

IGSS

Gate-body leakage current

VGS = -6/10 V, VDS = 0 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = 28 V, IDS = 300 μA

1.75

2.50

V

VGS(Q)

Gate quiescent voltage

VDS= 1 V, IDS= 100 mA

2

4

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, IDS = 800 mA

1.1

V

RDS(on)

Drain-source on-state resistance

VGS = 10 V, VDS=100 mV

1.5

Ω

IDS(on)

Static drain-source on-current

2.5

A

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

f

Frequency

700

4200

MHz

POUT

Output power

f = 3600 MHz, pulsed CW

8

W

GPS

Power gain

14.5

dB

ƞD

Drain efficiency

47

%

VSWR

Load mismatch

at 8 W pulsed CW output power,

all phases

10:1

Note:

VDD = 28 V, IDQ = 85 mA, pulse width = 100 μs, duty cycle = 10%.

RF2L42008CG2

Electrical characteristics

DS13240 - Rev 3

page 3/12