2

Electrical characteristics

Table 4. Static (per side)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, IDS = 100 µA

90

-

V

IDSS

Zero gate voltage drain leakage

current

VGS = 0 V, VDS = 42 V

-

1

μA

VGS = 0 V, VDS = 75 V

-

IGSS

Gate-source leakage current

VGS = -8/10 V, VDS = 0 V

-

±100

nA

VGS(th)

Gate threshold voltage

VDS = 40 V, IDS = 600 µA

1.75

-

2.50

V

VGS(Q)

Gate quiescent voltage

VDS = 1 V, IDS = 100 mA

2

-

5

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, IDS = 5 A

-

0.5

V

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

-

2.5

A

RDS(on)

Drain-source on-state resistance

VGS = 10 V, VDS = 100 mV

-

1

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

f = 915 MHz, pulsed CW,

1 dB compression

-

700

W

GPS

Power gain

-

15

dB

ηD

Drain efficiency

-

70

%

VSWR

Load mismatch

POUT = 700 W, all phases

-

10:1

Note:

VDD = 40 V, IDQ = 100 mA, pulse width = 100 μs, duty cycle = 10%.

RF4L10700CB4

Electrical characteristics

DS13741 - Rev 2

page 3/11