2

Electrical characteristics

(TC= 25 °C unless otherwise specified).

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0 V, ID= 1 mA

90

V

IDSS

Zero-gate voltage drain

current

VGS= 0 V, VDS= 75 V

1

µA

IGSS

Gate-body leakage current

VGS= -6/10 V, VDS=0 V

±100

nA

VGS(th)

Gate threshold voltage

VDS= 10 V, ID= 50 µA

1.5

2.5

V

VGS(Q)

Gate quiescent voltage

VDS = 1 V, IDS = 100 mA

2.0

5.0

V

IDS(on)

Static drain-source on-current VGS = 10 V, VDS = 100 mV

2.5

A

RDS(on)

Drain-source on-state

resistance

VGS = 10 V, VDS = 100 mV

1

Ω

VDS(on)

Static drain-source on-

resistance

VGS= 1 V, ID= 100 mA

250

mV

Ciss

Common source input

capacitance

VGS= 0 V, VDD= 28 V, f = 1 MHz

15

pF

Coss

Common source output

capacitance

5.7

Crss

Common source feedback

capacitance

0.4

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

f=930 MHz

1dB compression

-

10

W

GPS

Power gain

-

23

dB

ηD

Drain efficiency

-

58

%

VSWR

Load mismatch

@ POUT = 10 W all phases

-

20:1

Note:

VDD= 28 V, IDQ = 100 mA, pulsed CW, pulse width=10 μs, duty cycle = 10%

ST16010

Electrical characteristics

DS12651 - Rev 3

page 3/12