Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCC = 300 V, IC = 50 A,

RG = 6.8 Ω, VGE = ±15 V,

di/dt = 2062 A/µs, TJ = 150 °C

148

ns

tr

Current rise time

19.2

ns

Eon(1)

Turn-on switching energy

0.311

mJ

td(off)

Turn-off delay time

VCC = 300 V, IC = 50 A,

RG = 6.8 Ω, VGE = ±15 V,

dv/dt = 5800 V/µs, TJ = 150 °C

110

ns

tf

Current fall time

221

ns

Eoff(2)

Turn-off switching energy

1.98

mJ

tSC

Short-circuit withstand

time

VCC ≤ 360 V, VGE ≤ 15 V,

TJstart ≤ 150 °C

6

µs

RTHj-c

Thermal resistance

junction-to-case

Each IGBT

0.65

0.72

°C/W

RTHc-h

Thermal resistance case-

to-heatsink

Each IGBT, λgrease = 1 W/(m·°C)

0.79

°C/W

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

1.2

Diode

Limiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

V

IF

Continuous forward current at (TC = 100 °C)

50

A

IFP(1)

Pulsed forward current (tp = 1 ms)

100

A

TJMAX

Maximum junction temperature

175

°C

TJop

Operating junction temperature range under switching conditions

-40 to 150

°C

1. Pulse width limited by maximum junction temperature.

Table 4. Electrical characteristics of the diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VF (terminal)

Forward voltage

IF = 50 A

-

1.85

2.65

V

IF = 50 A, TJ = 150 ˚C

-

1.65

trr

Reverse recovery time

IF = 50 A, VR = 300 V,

VGE = ±15 V, di/dt = 2400 A/μs

-

142

ns

Qrr

Reverse recovery charge

-

1.87

µC

Irrm

Reverse recovery current

-

40

A

Erec

Reverse recovery energy

-

0.41

mJ

trr

Reverse recovery time

IF = 50 A, VR = 300 V,

VGE = ±15 V, di/dt = 2062 A/μs,

TJ = 150 °C

-

260

ns

Qrr

Reverse recovery charge

-

5.2

µC

Irrm

Reverse recovery current

-

58

A

Erec

Reverse recovery energy

-

1.32

mJ

A1P50S65M2-F

Diode

DS12333 - Rev 3

page 3/15