Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off delay time

VCC = 600 V, IC = 75 A,

RG = 10 Ω, VGE = ±15 V,

dv/dt = 6000 V/µs;

250

ns

tf

Current fall time

159

ns

Eoff (2)

Turn-off switching

energy

5.13

mJ

td(on)

Turn-on delay time

VCC = 600 V, IC = 75 A,

RG = 10 Ω, VGE = ±15 V,

di/dt = 1718 A/µs, TJ = 150 °C

200

ns

tr

Current rise time

35

ns

Eon (1)

Turn-on switching

energy

6.28

mJ

td(off)

Turn-off delay time

VCC = 600 V, IC = 75 A,

RG = 10 Ω, VGE = ±15 V,

dv/dt = 4900 V/µs, TJ = 150 °C

266

ns

tf

Current fall time

251

ns

Eoff (2)

Turn-off switching

energy

7.7

mJ

tSC

Short-circuit withstand

time

VCC ≤ 600 V, VGE ≤ 15 V,

TJstart ≤ 150 °C

10

µs

RTHj-c

Thermal resistance

junction-to-case

Each IGBT

0.30

0.33

°C/W

RTHc-h

Thermal resistance

case-to-heatsink

Each IGBT, λgrease = 1 W/(m·°C)

0.60

°C/W

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

1.2

Diode

Limiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1200

Vrms

IF

Continuous forward current (TC = 100 °C)

75

A

IFP (1)

Pulsed forward current (tp = 1 ms)

150

A

TJMAX

Maximum junction temperature

175

°C

TJop

Operating junction temperature range under switching conditions

-40 to 150

°C

1. Pulse width limited by maximum junction temperature.

A2P75S12M3-F

Diode

DS11656 - Rev 5

page 3/14