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STIB1560DM2-L 数据表(PDF) 6 Page - STMicroelectronics

部件名 STIB1560DM2-L
功能描述  SLLIMM - 2nd series IPM, 3-phase inverter, 0.15 Ω typ., 15 A, 600 V Power MOSFET
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STIB1560DM2-L 数据表(HTML) 6 Page - STMicroelectronics

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3
Electrical characteristics
TJ = 25 °C unless otherwise noted.
3.1
Inverter part
Table 6. Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDSS
Zero gate voltage drain current
VDS = 600 V, VCC = Vboot = 15 V
100
μA
V(BR)DSS
Drain-source breakdown voltage
VCC = Vboot = 15 V,
VIN(1) = 0 V, ID = 1 mA
600
V
RDS(on)
Static drain-source turn-on
resistance
VCC = Vboot = 15 V, VIN(1) = 0 to 5 V,
ID = 1.5 A
0.13
Ω
VCC = Vboot = 15 V, VIN(1) = 0 to 5 V,
ID = 15 A
0.15
0.17
VSD
Drain-source diode forward
voltage
VIN(1) = 0 V, ID = 15 A
0.98
1.36
V
1. Applied among HINx, LINx and GND for x = U, V, W.
Table 7. Inductive load switching time and energy
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ton(1)
Turn-on time
VDD = 300 V, VCC = Vboot = 15 V,
VIN(2) = 0 to 5 V, ID = 15 A
-
690
-
ns
tc(on)(1)
Cross-over time on
-
210
-
toff(1)
Turn-off time
-
1100
-
tc(off)(1)
Cross-over time off
-
77
-
trr
Reverse recovery time
-
230
-
Eon
Turn-on switching energy
-
750
-
µJ
Eoff
Turn-off switching energy
-
115
-
Err
Reverse recovery energy
-
14
-
1. ton and toff include the propagation delay time of the internal drive. tC(on) and tC(off) are the switching times of the MOSFET
itself under the internally given gate driving condition.
2. Applied among HINx, LINx and GND for x = U, V, W.
STIB1560DM2-L
Electrical characteristics
DS13085 - Rev 1
page 6/22



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