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L6399 数据表(PDF) 1 Page - STMicroelectronics |
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L6399 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() This is information on a product in full production. March 2017 DocID030402 Rev 2 1/18 L6399 High voltage high and low-side driver Datasheet - production data Features High voltage rail up to 600 V dV/dt immunity ± 50 V/ns over full temperature range Driver current capability: – 290 mA source – 430 mA sink Switching times 75/35 ns rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Internal 320 ns deadtime Interlocking function Compact and simplified layout Bill of material reduction Flexible, easy and fast design Applications Home appliances Industrial applications and drives Motor drivers DC, AC, PMDC and PMAC motors systems HVAC Factory automation Power supply systems Compressors Fans Lighting applications Description The L6399 is a high voltage device manufactured using BCD™ “offline” technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs. The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy microcontroller/DSP interfacing. www.st.com |
类似零件编号 - L6399 |
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类似说明 - L6399 |
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