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40N03. 数据表(PDF) 4 Page - VBsemi Electronics Co.,Ltd

部件名 40N03.
功能描述  N-Channel 30-V (D-S) MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

40N03. 数据表(HTML) 4 Page - VBsemi Electronics Co.,Ltd

  40N03. Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd 40N03. Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd 40N03. Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd 40N03. Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd 40N03. Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd 40N03. Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd 40N03. Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd 40N03. Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD -Source-to-Drain Voltage (V)
1
0.01
0.001
0.1
10
100
TJ = 150 °C
TJ = 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ - Temperature (°C)
ID =5mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
012
345
67
8
910
VGS - Gate-to-Source Voltage (V)
TJ =25 °C
TJ = 125 °C
ID =10A
0
24
48
72
96
120
0
1
1
1
0
0
.
00.01
Time (s)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
0.1
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
1ms
10 ms
100 ms
0.1
1
10
10
TA = 25 °C
Single Pulse
Limited byRDS(on)*
1s
DC
10 s
BVDSS
Limited
www.VBsemi.com
m
m
m
m
m
m
m
服务热线：400-655-8788
40N03.
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