1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current (per diode)

0

2

4

6

8

10

12

14

16

18

20

22

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

PF(AV)(W)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1.0

IF(AV)(A)

T

δ=tp/T

tp

Figure 2. Average forward current versus ambient

temperature (δ = 0.5, per diode)

0

4

6

8

10

12

14

16

18

20

22

0

25

50

75

100

125

150

175

I

(A)

F(AV)

2

Figure 3. Normalized avalanche power derating versus

pulse duration (Tj= 125 °C)

P

(tp)

P

(10 µs)

ARM

ARM

0.001

0.01

0.1

1

1

10

100

1000

t (µs)

p

Figure 4. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

t (s)

p

Z

/ R

th(j-c)

th(j-c)

Single pulse

Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

IR(µA)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

10

30

50

70

90

110

130

150

Tj = 75 °C

Tj = 100 °C

Tj = 125 °C

Tj = 150 °C

Tj = 50 °C

Tj = 25 °C

VR(V)

Figure 6. Junction capacitance versus reverse voltage

applied (typical values, per diode)

C(pF)

10

100

1000

1

10

100

1000

VR(V)

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

STPS40150C

Characteristics (curves)

DS3262 - Rev 2

page 3/15