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L9961 数据表(PDF) 49 Page - STMicroelectronics |
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L9961 数据表(HTML) 49 Page - STMicroelectronics |
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49 / 63 page  5.5 HS/LS pre-drivers circuit Figure 20. HS/LS pre-drivers circuit GADG220620221400SA L9961 VSD DCHG CHG VSC P- P+ RDCHG RCHG MDCHG MCHG LS configuration HS configuration L9961 P- P+ VSD DCHG CHG VSC RDCHG RCHG MDCHG MCHG VB P- DR P+ DR Table 37. Typical HS/LS Pre-Drivers BOM Components Value Unit Max. tolerance Rating Comments RCHG 2 MΩ 10% 1/10 W Pull-down resistor RDCHG 2 MΩ 10% 1/10 W Pull-down resistor MCHG 40 V Battery charge FET. The STL210N4F7 is suggested MDCHG 40 V Battery discharge FET. The STL210N4F7 is suggested DR 40 V Recirculation diode. It is intended to protect VSD/VSC pin by recirculating the energy stored in the parasitic inductance of wires in case of the discharge phase is sudden interrupted. 5.6 Fuse circuit Figure 21. Fuse circuit GADG220620221404SA P+ REDUNDANT PROTECTOR L9961 FUSE C5 C0 RFUSE RFUSE_EXT DZFUSE MFUSE FUSE CFUSE RPD L9961 HS/LS pre-drivers circuit DS14012 - Rev 1 page 49/63 |
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