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STTH40200CHR 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH40200CHR
功能描述  Rad-Hard 40 A - 200 V fast recovery rectifier
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH40200CHR 数据表(HTML) 3 Page - STMicroelectronics

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1.3
Electrical characteristics
Limiting value per diodes, unless otherwise specified.
Table 3. Static electrical characteristics
Symbol
Parameter
MIL-STD-750 test method
Test conditions(1)
Min. Max. Unit
IR
Reverse leakage current
4016
DC method, VR = 200 V
Tj = 25 °C
-
30
µA
Tj = 125 °C
-
300
VF (2)
Forward voltage drop
4011
IF = 5 A
Tj = -55 °C
-
1.04
V
Tj = 25 °C
-
0.87
Tj = 125 °C
-
0.66
IF = 10 A
Tj = -55 °C
-
1.07
Tj = 25 °C
-
0.92
Tj = 125 °C
-
0.75
IF = 20 A
Tj = -55 °C
-
1.15
Tj = 25 °C
-
1.02
Tj = 125 °C
-
0.87
IF = 30 A
Tj = -55 °C
-
1.2
Tj = 25 °C
-
1.09
Tj = 125 °C
-
0.95
IF = 40 A
Tj = -55 °C
-
1.25
Tj = 25 °C
-
1.15
Tj = 125 °C
-
1.02
1. Test performed with both anode terminals 2 and 3 tied together
2. Pulse width 680 µs, duty cycle ≤ 2%
Table 4. Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
C (1)
Junction capacitance
Tj = 25 °C
VR = 10 V, F = 1 MHz
-
-
225
pF
trr(1)(2)
Reverse recovery time
Tj = 25 °C
IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V
-
-
60
ns
IRM(2)
Reverse recovery current
Tj = 125 °C IF = 20 A, dIF/dt = -200 A/µs, VR = 160 V
-
9.5
A
QRR
Reverse recovery charges
-
295
nC
Sfactor
Softness factor
-
0.25
1. By default, guaranteed by sampling. Guaranteed by a 100% test in case the sampling acceptance criteria is not met.
2. Guaranteed by design and characterization. Not tested in production
STTH40200CHR
Electrical characteristics
DS12525 - Rev 5
page 3/12



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